Mje3055anpn rohs mje2955apnp semiconductor rohs nell high power products complementary silicon power transistors 10a 60v 75w features designed for generalpurpose switching and amplifier applications. Ensuring that chips will be reliable at 5nm and 3nm is becoming more difficult due to the introduction of new materials, new transistor structures, and the projected use of these chips in safety and missioncritical applications. Mje2955 datasheet, equivalent, cross reference search. Complementary silicon power transistors, mje3055t datasheet, mje3055t circuit, mje3055t data sheet. Suitable especially for pulse converters in illuminating engineering. Mje3055t mje3055 npn transistor 10a 60v tayda electronics. Mje3055anpn rohs mje2955apnp semiconductor rohs nell high power products complementary silicon power transistors 10a 60v 75w features designed for general. Success in operation of transistor with channel length of 3 nm. Stmicroelectronics, alldatasheet, datasheet, datasheet search. Bipolar transistor 50v, 2a, low vcesat, npn single features adoption of mbit process low collector to emitter saturation voltage large current capacity high speed switching typical applications voltage regulators relay drivers lamp drivers electrical equipment specifications. Mje3055t, mje3055t npn power transistor, buy mje3055t transistor. Complementary silicon power transistors aredesigned for.
Datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for. Bc846 series 65 v, 100 ma npn generalpurpose transistors. Notice mospec reserves the rights to make changes of the content herein the document anytime without notification. Datasheet search engine for electronic components and semiconductors. Page 2 of 4 electrical characteristics t ambient25. Mje3055t datasheet, mje3055t npn power transistor datasheet, buy mje3055t transistor. Mje3055t npn silicon transistor absolute maximum ratings tc25c unless otherwise noted electrical characteristics tc25c unless otherwise noted pulse test. Mje2955 pnp transistor for bedini energizer tesla experiments.
Mospec or anyone on its behalf, assumes no responsibility or liability for any errors or. Characteristic symbol rating unit collectorbase voltage collectoremitter voltage emitterbase voltage collector current dc collector dissipation junction temperature. If your question requires design or troubleshooting information, please email email protected for a prompt reply. The three terminals of this npn mje3055t gp bjt from stmicroelectronics give it the ability to be used as either an electronic switch or amplifier. It is intented for use in medium power linear and switching. D880 datasheet 3a, 60v, npn power transistor mospec, 2sd880 datasheet, d880 transistor, d880 pdf, d880 pinout, d880 equivalent, data, d880 schematic. The developed transistor was fabricated employing a vshaped groove created by. Get your questions answered from other customers who own this product or have experience with it. Mospec, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Savantic semiconductorproduct specification4silicon npn power transistorsmje3055t datasheet search, datasheets, datasheet search site for electronic components and semiconductors, integrated circuits, diodes and other semiconductors. Fast shipping on all bipolar transistors orders within europe. Ericsson rbs 6102 asea hafo ab gm378 transistor b0243c kt606 ericsson spo 1410 semicon indexes transistor 8bb smd trnec tokin 0d 108 text. Description with to220 package high power dissipation applications power amplifier and medium speed switching applications pinning pin description 1base 2 collector. Lp395 ultra reliable power transistor datasheet texas instruments.
Mje2955t complementary silicon plastic power transistors. Description the is a silicon epitaxialbase planar npn transistor mounted in jedec to3 metal case. Aug 08, 2016 c829 datasheet vcbo30v, npn transistor panasonic, 2sc829 datasheet, c829 pdf, c829 pinout, c829 manual, c829 schematic, c829 equivalent, c829 data. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification.
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A1, february 2001 typical characteristics figure 1. Mje3055t datasheet, equivalent, cross reference search. This publication supersedes and replaces all information previously supplied. Aist researchers have confirmed the operation of an ultraminiaturized transistor with a channel length of 3 nm. Bc556b, bc557a, b, c, bc558b amplifier transistors on. Power transistors 10a,60v,75w, mje3055t datasheet, mje3055t circuit, mje3055t data sheet. Ct7343 tdk capacitors c0805 transistor fs 20 sm d1 marking code dpak transistor c3216x5r1c106mt 10uf tssop28 transistor fs 14 sm sc2453itstr c3216x5r1c106mt. See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Ztx603 silicon planar medium power darlington transistor datasheet. Ibm research scientist nicolas loubet holds a wafer of chips. Research alliance builds new transistor for 5nm technology. Typical parameters which may be provided in scillc data sheets andor specifications can and do vary in.
Motorola, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Buy transistor mje3055, npn, 70 v, 10 a, 75 w, 2 mhz, to220 for 0. Obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. Typical parameters which may be provided in scillc data sheets andor. This bipolar junction transistors maximum emitter base voltage is 5 v. Mje3055t datasheet pdf leaded power transistor general. Power dissipation 25c dc current gain hfe 4 a vce sat 1. Silicon npn transistor sgsthomsonpreferred salestype description the 2n3055 is a silicon epitaxialbase npn transistor in jedecto3 metalcase.
Specification mentioned in this publication are subject to change without notice. Epitaxial planar npn description the 2n1711 is a silicon planar epitaxial npn transistor in jedec to39 metal case. When the device is used as an emitter follower with a low source. Click here specifications bipolar transistors transistor type. Internal schematic diagram september 2003 absolute maximum ratings symbol parameter value unit npn mje3055t pnp mje2955t vceo collectoremitter voltage i b 0 60 v vcbo collectorbase voltage. Tip110, tip115 darlington transistors page 4 160306 v1. Mje2955t mje3055t complementary silicon power transistors stmicroelectronics preferred salestypes complementary pnp npn devices description the mje3055t is a silicon epitaxialbase npn transistor in jedec to220 package. Power transistors are transistors which can handle a lot more power in compared to bjts. It is intented for use in high performance amplifier, oscillator and switching circuits. A selection of the most commonly used transistors and more.
Ct7343 tdk capacitors c0805 transistor fs 20 sm d1 marking code dpak transistor c3216x5r1c106mt 10uf tssop28 transistor fs 14 sm sc2453itstr c3216x5r1c106mt text. See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Technical information motorola semiconductor mje3055t datasheet. Pdf barcelona28, s171 ch5400 t110 94v 0 ptc sy 16p 2n2955t philips diode ph 37m 35k0 trimble r8 model 2 2sc497 2sa749 2n6259 ssi 2n4948 njs. Mje3055t datasheet, mje3055t pdf, mje3055t data sheet, mje3055t manual, mje3055t pdf, mje3055t, datenblatt, electronics mje3055t, alldatasheet, free, datasheet. Unit conditions vceosus collectoremitter sustaing voltage 60 v ic200ma, ib0 vcersus collectoremitter sustaing voltage 70 v ic200ma, rbe100. Ibm research alliance builds new transistor for 5nm technology less than two years since announcing a 7nm test chip, scientists have achieved another breakthrough news provided by. Stmicroelectronics preferred salestypes complementary npnpnp devices. Control the flow of electricity in your electronic equipment. Similar to bjts, the current flow between the collector and the emitter of is controlled by the current flow through the base.
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